The Project: Siemens Gamesa Renewable Energy, together with the University of Edinburgh, are looking for enthusiastic, self-motivating applicants for an exciting PhD research position that will help define the next generation of wind energy power electronic conversion systems. This work will provide the opportunity to both contribute to leading edge research and develop industry relevant skills in renewable energy, electronic design, electrical power systems and power semiconductor applications.
The successful candidate will work under the guidance of leading industry and academic experts on a project exploring the use of state-of-art power electronics to deliver gains in both efficiency and reliability in the clean energy sector. Outputs from this project will influence real world technology, leading to industry scale testing with one of the global leaders in wind energy.
The position will be based within Edinburgh University’s, world leading, Institute of Energy Systems with regular contact and engagement with the Siemens Gamesa R&D centre in Keele, UK. Funding is provided for three and a half years covering tuition fees, travel/conference budget and an enhanced, tax free, PhD stipend of £19,000/year equating to an equivalent gross salary of approximately £23000.
The PhD student will be joining a team at Edinburgh including other PhD students and post-doctoral researchers, with significant interaction also expected with a collaborating research team within the University of Bristol. Funding is available for conference attendance as well as training events
Technical Summary: The project will investigate power electronic architectures for the next generation of off-shore wind turbines. Research will address medium term challenges of exploiting of the completely different characteristics of SiC-MOSFET (compared to silicon IGBT) on choice of wind-turbine converter topology and connection voltage with the target of the most /total cost optimised solution in ac-connected offshore wind turbines. Specific challenges such as high dv/dt values and increased levels of radiated EMI that arise when using wide-bandgap semiconductors will be investigated, and solutions developed and experimentally tested. This project will involve a substantial amount of experimentation suing the high-voltage and high-current test facilities at Edinburgh (see images below),
Early application is advised as the position will be filled once a suitable candidate is identified.
The University of Edinburgh is committed to equality of opportunity for all its staff and students, and promotes a culture of inclusivity. Please see details here: https://www.ed.ac.uk/equality-diversity
Minimum entry qualification - an Honours degree at 2:1 or above (or International equivalent) in Electrical and Electronic Engineering, or closely related discipline, possibly supported by an MSc Degree. Further information on English language requirements for EU/Overseas applicants.
Tuition fees + stipend are available for applicants who qualify as Home applicants (International/Overseas applicants are not eligible). To qualify as a Home student, you must fulfill one of the following criteria:
• You are a UK applicant
• You are an EU applicant with settled/pre-settled status