IMNS Seminar Series: CMOS Group


Conference Room 1:03/1:04, SMC, King's Building Campus


Thursday, September 18, 2014 - 12:00

The IMNS are pleased to announce the following talks highlighting advances made by the CMOS Sensors and Systems group:

  1. "A 9:8 μm Sample and Hold Time to Amplitude Converter CMOS SPAD Pixel"

    Luca Parmesan
    A 9:8 μm pitch SPAD-based pixel is presented with a novel and scalable Sample and Hold (S/H) Time to Amplitude Converter (TAC) pixel architecture offering the potential to create high spatial resolution Time Correlated Single Photon Counting (TCSPC) image sensors in the future. This pixel pitch is an order of magnitude smaller than previous TCSPC pixels. The NMOS-only TAC performance is measured in a single point TCSPC optical experimental setup. 93 ps LSB time resolution is obtained over 80 ns dynamic range. Dynamic range limitations are discussed and improvements are suggested.

  2. "A 256 × 8 SPAD Line Sensor for Time Resolved Fluorescence and Raman Sensing"

    Nikola Krstajić
    A 256 × 8 single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) line sensor enables both fluorescence and Raman spectroscopy in a single device. The 23.78um pitch, 46.8% fill-factor SPAD array is implemented in a 0.13um CMOS image sensor process. Integrating time to digital converters (TDCs) implement on-chip mono-exponential fluorescence lifetime pre-calculation allowing timing of 65k photons/pixel at 500s-1 line rate at 40ps resolution using centre-of-mass method (CMM). TCSPC histograms may also be generated with 320ps bin resolution for multi-exponential analysis.

CMOS Further Information

Complementary Metal-Oxide Semiconductor CMOS Research  and Development
CMOS (Complementary Metal-Oxide Semiconductor) Research and Development

Event Contact Name: 

Dr Jonathan Terry

Event Contact Email: